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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() 2SK1317-E $11.88 | Renesas Electronics Corporation | MOSFET N-CH 1500V 2.5A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |
![]() 2SK1318-90-E $2.52 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK1335-90L $1.33 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK1337TZ-E $0.25 | Renesas Electronics Corporation | SMALL SIGNAL N-CHANNEL MOSFET | Bulk | - | - | * | - |
![]() 2SK1338-E $6.24 | Renesas Electronics Corporation | NCH POWER MOSFET 900V 2A 7000MOH | Tray | TO-220AB | Through Hole | - | 150°C |
| Renesas Electronics Corporation | MOSFET N-CH 900V 3A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | MOSFET N-CH 900V 5A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) | |
| Renesas Electronics Corporation | MOSFET N-CH 900V 6A TO3P | Tube | TO-3P | Through Hole | - | 150°C (TJ) |

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