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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() AIKQB120N75CP2AKSA1 $6.10 | Infineon Technologies | DISCRETE SWITCHES | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKQB120N75CP2ALSA1 $10.73 | Infineon Technologies | AIKQB120N75CP2ALSA1 | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKQB160N75CP2AKSA1 $6.84 | Infineon Technologies | DISCRETE SWITCHES | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKQB160N75CP2ALSA1 $11.75 | Infineon Technologies | AIKQB160N75CP2ALSA1 | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKQB200N75CP2AKSA1 $7.82 | Infineon Technologies | DISCRETE SWITCHES | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKQB200N75CP2ALSA1 $13.06 | Infineon Technologies | AIKQB200N75CP2ALSA1 | Tube | PG-TO247-3-51 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() AIKW20N60CTXKSA1 $4.45 | Infineon Technologies | IGBT TRENCH FS 600V 40A TO-247-3 | Tube | PG-TO247-3-41 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
![]() AIKW30N60CTXKSA1 $5.02 | Infineon Technologies | IGBT TRENCH FS 600V 60A TO-247-3 | Tube | PG-TO247-3-41 | Through Hole | TrenchStop™ | -40°C ~ 175°C (TJ) |
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