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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesDISCRETE SWITCHESTubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesAIKQB120N75CP2ALSA1TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesDISCRETE SWITCHESTubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesAIKQB160N75CP2ALSA1TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesDISCRETE SWITCHESTubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesAIKQB200N75CP2ALSA1TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 40A TO-247-3TubePG-TO247-3-41Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 60A TO-247-3TubePG-TO247-3-41Through HoleTrenchStop™-40°C ~ 175°C (TJ)
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