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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesAIKYX120N75CP2ALSA1TubePG-TO247-4-13Through HoleEDT2™-40°C ~ 175°C (TJ)
Infineon TechnologiesAIKYX160N75CP2ALSA1TubePG-TO247-4-13Through HoleEDT2™-40°C ~ 175°C (TJ)
Infineon TechnologiesAIKYX200N75CP2ALSA1TubePG-TO247-4-13Through HoleEDT2™-40°C ~ 175°C (TJ)
Alpha & Omega Semiconductor Inc.IGBT MODULE IPM 3 PHASEBulk----
Infineon TechnologiesIGBTTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesIGBTTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesIGBTTape & Reel (TR),Cut Tape (CT)----
Infineon TechnologiesIGBTTape & Reel (TR),Cut Tape (CT)----
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