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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTGLQ50H65T3G $51.09 | Microchip Technology | IGBT MODULE 650V 70A 175W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ50TL65T3G $56.17 | Microchip Technology | IGBT MODULE 650V 70A 175W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ50VDA65T3G $41.79 | Microchip Technology | IGBT MODULE 650V 70A 175W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ600A65T6G $217.38 | Microchip Technology | IGBT MODULE 650V 1200A 2000W SP6 | Bulk | SP6 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ75H120T3G $79.73 | Microchip Technology | IGBT MODULE 1200V 130A 385W SP1 | Bulk | SP1 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ75H120TG $97.42 | Microchip Technology | IGBT MODULE 1200V 130A 385W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ75H65T1G $62.54 | Microchip Technology | IGBT MODULE 650V 150A 250W SP1 | Bulk | SP1 | Through Hole | - | -40°C ~ 175°C (TJ) |
![]() APTGLQ80HR120CT3G $81.76 | Microchip Technology | IGBT MODULE 1200V 150A 500W SP3 | Bulk | SP3 | Through Hole | - | -40°C ~ 175°C (TJ) |
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