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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH FS 650V 96A TO263-7Tape & Reel (TR),Cut Tape (CT)PG-TO263-7-U04Surface MountCoolSiC™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 40A TO220-3Bulk,TubePG-TO220-3-1Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 160A TO247-3TubePG-TO247-3-46Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 160A TO247-3TubePG-TO247-3-46Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 750V 150A TO247-3-46TubePG-TO247-3-46Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 750V 200A TO-247-3TubeTO-247-3Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesDISCRETE SWITCHESTubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesAIKQB120N75CP2ALSA1TubePG-TO247-3-51Through Hole--40°C ~ 175°C (TJ)
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