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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT TRENCH FS 600V 80A TO-247-3TubePG-TO247-3-41Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V TO247-3-41TubePG-TO247-3-41Through HoleTrenchstop™ 5-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH 650V TO247-3-41TubePG-TO247-3-41Through HoleTrenchstop™ 5-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 650V 80A TO247-3TubePG-TO247-3Through HoleTrenchstop™ 5-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 80A TO-247-3TubePG-TO247-3-41Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 80A TO-247-3TubePG-TO247-3-41Through HoleTrenchStop™-40°C ~ 175°C (TJ)
Infineon TechnologiesAIKYX120N75CP2ALSA1TubePG-TO247-4-13Through HoleEDT2™-40°C ~ 175°C (TJ)
Infineon TechnologiesAIKYX160N75CP2ALSA1TubePG-TO247-4-13Through HoleEDT2™-40°C ~ 175°C (TJ)
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