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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Toshiba Semiconductor and Storage | MOSFET N-CH 500V 18A TO3PIS | Tube | TO-3P(N)IS | Through Hole | - | 150°C (TJ) | |
![]() 2SK2932-E $1.18 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK2933-E $1.31 | Renesas | 2SK2933 - N-CHANNEL POWER MOSFET | Bulk | TO-220CFM | Through Hole | - | 150°C |
![]() 2SK2934-92-E $1.84 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK2935-91-E $2.78 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK2935-92-E $2.78 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK2935-93-E $2.78 | Renesas Electronics Corporation | N-CHANNEL POWER MOSFET | Bulk | - | - | * | - |
![]() 2SK2943 $1.78 | Sanken Electric USA Inc. | MOSFET N-CH 900V 3A TO220F | Bulk | TO-220F | Through Hole | - | 150°C (TJ) |

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