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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() CGHV40200PP $388.26 | MACOM Technology Solutions | RF MOSFET HEMT 440199 | Tray | 440199 | - | - | |
![]() CGHV40200PP-AMP1 $927.09 | MACOM Technology Solutions | RF MOSFET HEMT 50V 440199 | Bulk | 440199 | Chassis Mount | GaN | |
![]() CGHV40320D-GP4-2 $431.86 | MACOM Technology Solutions | RF MOSFET HEMT 50V DIE | Tray | Die | - | GaN | |
![]() CGHV50200F $1,118.44 | MACOM Technology Solutions | RF MOSFET HEMT 40V 440217 | Tray | 440217 | - | GaN | |
![]() CGHV59070F $330.11 | MACOM Technology Solutions | RF MOSFET HEMT 50V 440224 | Tray | 440224 | - | GaN | |
![]() CGHV59070P $330.11 | MACOM Technology Solutions | RF MOSFET HEMT 50V 440170 | Tray | 440170 | Surface Mount | GaN | |
![]() CGHV59350F $1,929.25 | MACOM Technology Solutions | RF MOSFET HEMT 50V 440217 | Tray | 440217 | - | GaN | |
![]() CGHV59350P $1,929.25 | MACOM Technology Solutions | RF MOSFET GAN HEMT 50V 440218 | Tray | 440218 | Chassis Mount | - |

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