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Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APT48M80B2 $16.64 | Microchip Technology | MOSFET N-CH 800V 49A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 8™ | -55°C ~ 150°C (TJ) |
![]() APT48M80L $16.37 | Microchip Technology | MOSFET N-CH 800V 49A TO264 | Tube | TO-264 [L] | Through Hole | - | -55°C ~ 150°C (TJ) |
| Microchip Technology | MOSFET N-CH 1200V 4A TO220 | Tube | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT4F120S $3.79 | Microchip Technology | MOSFET N-CH 1200V 4A D3PAK | Tube | D3PAK | Surface Mount | POWER MOS 8™ | - |
| Microchip Technology | MOSFET N-CH 1200V 5A TO220 | Tube | TO-220 [K] | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() APT5010B2FLLG $14.77 | Microchip Technology | MOSFET N-CH 500V 46A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT5010B2LLG $14.47 | Microchip Technology | MOSFET N-CH 500V 46A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS 7® | -55°C ~ 150°C (TJ) |
![]() APT5010B2VRG $15.65 | Microchip Technology | MOSFET N-CH 500V 47A T-MAX | Tube | T-MAX™ [B2] | Through Hole | POWER MOS V® | - |
IPTC026N12NM6ATMA1View Product
FDP13AN06A0-SW82126View Product
G75P04KIView Product
RS1P600BHTB1View Product
HUF76419D3STR4921View Product
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BUZ73ALView Product
SI2365EDS-T1-GE3View Product
SI6413DQ-T1-GE3View Product
IRFH7440TR2PBFView Product
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