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Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | MOSFET N-CH 55V 17A TO252AA | Tube | TO-252AA | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 55V 17A TO252AA | Tape & Reel (TR),Cut Tape (CT) | TO-252AA | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 60V 56A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
![]() AUIRFR120Z $0.54 | International Rectifier | PFET, 8.7A I(D), 100V, 0.19OHM, | Bulk | DPAK | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
![]() AUIRFR120Z $0.54 | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | Tube,Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |
| Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | Tape & Reel (TR) | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 75V 42A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) | |
| Infineon Technologies | MOSFET N-CH 55V 30A DPAK | Tube | TO-252AA (DPAK) | Surface Mount | HEXFET® | -55°C ~ 175°C (TJ) |

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