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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTGTQ100A65T1G $50.99 | Microchip Technology | IGBT MODULE 650V 100A 250W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ100DA65T1G $41.94 | Microchip Technology | IGBT MODULE 650V 100A 250W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ100DDA65T3G $60.57 | Microchip Technology | IGBT MODULE 650V 100A 250W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ100H65T3G $77.01 | Microchip Technology | IGBT MODULE 650V 100A 250W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ100SK65T1G $41.94 | Microchip Technology | IGBT MODULE 650V 100A 250W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ150TA65TPG $184.75 | Microchip Technology | IGBT MODULE 650V 150A 365W SP6P | Bulk | SP6-P | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ200A65T3G $77.01 | Microchip Technology | IGBT MODULE 650V 200A 483W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGTQ200DA65T3G $60.57 | Microchip Technology | IGBT MODULE 650V 200A 483W SP3F | Bulk | SP3F | Chassis Mount | - | -40°C ~ 175°C (TJ) |
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