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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTGT75A1202G $30.82 | Microsemi Corporation | IGBT MODULE 1200V 110A 357W SP2 | Bulk | SP2 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT75A120T1G $58.23 | Microchip Technology | IGBT MODULE 1200V 110A 357W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT75A120TG $54.26 | Microsemi Corporation | IGBT MODULE 1200V 100A 350W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Microsemi Corporation | IGBT MODULE 1700V 120A 520W D1 | Bulk | D1 | Chassis Mount | - | - | |
![]() APTGT75A60T1G $40.67 | Microchip Technology | IGBT MODULE 600V 100A 250W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGT75DA120TG $57.16 | Microchip Technology | IGBT MODULE 1200V 110A 357W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT75DA60T1G $33.37 | Microchip Technology | IGBT MODULE 600V 100A 250W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGT75DDA60T3G $45.64 | Microchip Technology | IGBT MODULE 600V 100A 250W SP3 | Bulk | SP3 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
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