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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() APTGT50DU170TG $53.77 | Microsemi Corporation | IGBT MODULE 1700V 75A 312W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT50H120T3G $67.70 | Microchip Technology | IGBT MODULE 1200V 75A 270W SP3 | Bulk | SP3 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT50H120TG $53.98 | Microsemi Corporation | IGBT MODULE 1200V 75A 277W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT50H170TG $134.13 | Microchip Technology | IGBT MODULE 1700V 75A 312W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
![]() APTGT50H60RT3G $53.56 | Microchip Technology | IGBT MODULE 600V 80A 176W SP3 | Bulk | SP3 | Chassis Mount | - | - |
![]() APTGT50H60T1G $48.65 | Microchip Technology | IGBT MODULE 600V 80A 176W SP1 | Bulk | SP1 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGT50H60T3G $47.55 | Microchip Technology | IGBT MODULE 600V 80A 176W SP3 | Bulk | SP3 | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() APTGT50SK120TG $53.17 | Microchip Technology | IGBT MODULE 1200V 75A 277W SP4 | Bulk | SP4 | Chassis Mount | - | -40°C ~ 150°C (TJ) |
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