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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesLOW POWER ECONO AG-ECONO2A-211TrayAG-ECONO2BChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 45A 230WBulkModuleChassis Mount-150°C (TJ)
Infineon TechnologiesLOW POWER ECONO AG-ECONO2C-211TrayAG-ECONO2BChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 45A 230WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1200V 625A 2500WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1200V 550A 2700WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1700V 800A 3120WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MODULEBulkModuleChassis Mount-150°C (TJ)
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