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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BSM50GD120DN2BOSA1 $96.45 | Infineon Technologies | IGBT MOD 1200V 72A 350W | Tray | Module | Chassis Mount | - | 150°C (TJ) |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | AG-ECONO2A | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 1200V 50A 350W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 1200V 78A 400W | Bulk | Module | Chassis Mount | - | 150°C (TJ) | |
| Infineon Technologies | IGBT MOD 1700V 100A 480W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() BSM50GD60DLCBOSA1 $104.08 | Infineon Technologies | IGBT MODULE 600V 70A 250W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM50GP120BOSA1 $278.61 | Infineon Technologies | IGBT MODULE 1200V 50A | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM50GP60B2BOSA1 $46.63 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
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