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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MOD 1200V 72A 350WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesLOW POWER ECONO AG-ECONO2A-211TrayAG-ECONO2AChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 50A 350WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1200V 78A 400WBulkModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1700V 100A 480WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MODULE 600V 70A 250WBulk,TrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MODULE 1200V 50ATrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MODULEBulk--*-
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