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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MODULE 600V 70A 250W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 600V 70A 250W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C | |
| Infineon Technologies | IGBT MODULE 2 LOW PWR ECONO2-2 | Tray | - | - | - | - | |
| Infineon Technologies | LOW POWER ECONO AG-ECONO2A-211 | Tray | - | - | * | - | |
| Infineon Technologies | IGBT MOD 1200V 105A 625W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM75GAR120DN2HOSA1 $61.97 | Infineon Technologies | IGBT MOD 1200V 30A 235W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 175°C (TJ) |
![]() BSM75GB120DLCHOSA1 $65.19 | Infineon Technologies | IGBT MOD 1200V 170A 690W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BSM75GB120DN2_E3223C-SE $81.90 | Infineon Technologies | IGBT MODULE | Bulk | - | - | * | - |
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