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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() BYM300A120DN2HOSA1 $139.54 | Infineon Technologies | IGBT MOD 1200V 450A 1000W | Bulk,Tray | Module | Chassis Mount | - | 150°C (TJ) |
![]() BYM300B170DN2HOSA1 $146.60 | Infineon Technologies | IGBT MOD 650V 40A 20MW | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 150°C (TJ) |
| Infineon Technologies | IGBT MODULE 1400W MED PWR 62MM-2 | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
| Microchip Technology | ST-IGBT-SBD-6HPD | Bulk | - | - | - | - | |
| Infineon Technologies | IGBT MODULE CHOPPER KIT A-PSAO-1 | Tray | - | - | * | - | |
| Powerex Inc. | IGBT MOD 1700V 1000A 3900W | Bulk | Module | Chassis Mount | IGBTMOD™ | -40°C ~ 150°C (TJ) | |
![]() CM1000DXL-24S $456.46 | Powerex Inc. | IGBT MOD 1200V 1000A 7500W | Bulk | Module | - | IGBTMOD™ | -40°C ~ 150°C (TJ) |
![]() CM1000E3U-34NF $817.36 | Powerex Inc. | IGBT MOD 1700V 1000A 3900W | Bulk | Module | - | IGBTMOD™ | -40°C ~ 150°C (TJ) |
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