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IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| Infineon Technologies | IGBT MOD 1200V 105A 625W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM75GB170DN2HOSA1 $81.23 | Infineon Technologies | IGBT MOD 1700V 110A 625W | Bulk,Tray | Module | Chassis Mount | - | 150°C (TJ) |
| Infineon Technologies | IGBT MOD 600V 100A 355W | Bulk | Module | Chassis Mount | - | -40°C ~ 125°C | |
![]() BSM75GD120DLCBOSA1 $315.15 | Infineon Technologies | IGBT MOD 1200V 125A 500W | Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
| Infineon Technologies | IGBT MOD 1200V 103A 520W | Tray | Module | Chassis Mount | - | 150°C (TJ) | |
![]() BSM75GD60DLCBOSA1 $54.30 | Infineon Technologies | BSM75GD60DLC - IGBT MODULE | Bulk | - | - | * | - |
![]() BSM75GP60BOSA1 $54.30 | Infineon Technologies | IGBT MOD 600V 100A 310W | Bulk,Tray | Module | Chassis Mount | - | -40°C ~ 125°C |
![]() BUP213 $1.56 | Infineon Technologies | IGBT 1200V 32A TO-220AB | Tube | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
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