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IGBTs

IGBTs

IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Infineon TechnologiesIGBT MOD 1200V 105A 625WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 1700V 110A 625WBulk,TrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesIGBT MOD 600V 100A 355WBulkModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1200V 125A 500WTrayModuleChassis Mount--40°C ~ 125°C
Infineon TechnologiesIGBT MOD 1200V 103A 520WTrayModuleChassis Mount-150°C (TJ)
Infineon TechnologiesBSM75GD60DLC - IGBT MODULEBulk--*-
Infineon TechnologiesIGBT MOD 600V 100A 310WBulk,TrayModuleChassis Mount--40°C ~ 125°C
BUP213
BUP213
$1.56
Infineon TechnologiesIGBT 1200V 32A TO-220ABTubeTO-220ABThrough Hole--55°C ~ 150°C (TJ)
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