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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Watech ElectronicsIGBT 650V 90A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-4BulkTO-247-4Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 650V 90A TO-247-4BulkTO-247-4Through Hole--40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 1350V 40A TO247-6TubePG-TO247-6Through HoleTrenchStop™-40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT 1200V 3A TO220-3-31TubePG-TO220-3-31Through Hole--40°C ~ 150°C (TJ)
Infineon TechnologiesIGBT TRENCH FS 600V 18A TO220-3Tube,TubePG-TO220-3-31Through HoleTrenchStop®-40°C ~ 175°C (TJ)
Infineon TechnologiesIGBT 1200V 3.2A TO263-3-2Tape & Reel (TR)PG-TO263-3-2Surface Mount--40°C ~ 150°C (TJ)
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