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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 600V 70A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTP20N60C3R $4.17 | Harris Corporation | IGBT 600V 45A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP2N120CN $1.31 | onsemi | IGBT NPT 1200V 13A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP3N60A4 $1.18 | Harris Corporation | IGBT 600V 17A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP3N60A4D $1.13 | Fairchild Semiconductor | IGBT 600V 17A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP3N60B3 $0.44 | Harris Corporation | IGBT 600V 7A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP3N60B3R4724 $0.44 | Harris Corporation | 7A, 600V, UFS N-CHANNEL IGBT | Bulk | - | - | * | - |
![]() HGTP3N60C3 $0.44 | Harris Corporation | IGBT 600V 6A TO-220AB | Bulk | TO-220AB | Through Hole | - | -40°C ~ 150°C (TJ) |

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