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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 70A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 45A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 13A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 17A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 17A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 7A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris Corporation7A, 600V, UFS N-CHANNEL IGBTBulk--*-
Harris CorporationIGBT 600V 6A TO-220ABBulkTO-220ABThrough Hole--40°C ~ 150°C (TJ)
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