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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 500V 20A TO-218 ISOLATEDBulkTO-218 IsolatedThrough Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 20A TO-218 ISOLATEDBulkTO-218 IsolatedThrough Hole--55°C ~ 150°C (TJ)
Harris Corporation20A, 500V, N CHANNEL IGBT WITH ABulk--*-
onsemiIGBT NPT 1200V 35A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 10A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 17.5A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 10A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris Corporation17.5A, 400V, N-CHANNEL IGBTBulk--*-
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