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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 75A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 21A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 34A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 34A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
Harris Corporation12A, 400V, N CHANNEL IGBT WITH ABulk--*-
Harris CorporationIGBT 500V 12A TO-218 ISOLATEDBulkTO-218 IsolatedThrough Hole--55°C ~ 150°C (TJ)
Harris Corporation12A, 500V, N CHANNEL IGBT WITH ABulk--*-
Harris CorporationIGBT 500V 20A TO-218 ISOLATEDBulkTO-218 IsolatedThrough Hole--55°C ~ 150°C (TJ)
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