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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTG40N60C3R $7.12 | Harris Corporation | IGBT 600V 75A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG5N120BND $3.54 | onsemi | IGBT NPT 1200V 21A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG7N60A4 $1.22 | onsemi | IGBT 600V 34A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG7N60A4D $1.62 | Harris Corporation | IGBT 600V 34A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTH12N40CID $2.12 | Harris Corporation | 12A, 400V, N CHANNEL IGBT WITH A | Bulk | - | - | * | - |
![]() HGTH12N50C1D $2.12 | Harris Corporation | IGBT 500V 12A TO-218 ISOLATED | Bulk | TO-218 Isolated | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTH12N50CID $2.12 | Harris Corporation | 12A, 500V, N CHANNEL IGBT WITH A | Bulk | - | - | * | - |
![]() HGTH20N50C1 $5.79 | Harris Corporation | IGBT 500V 20A TO-218 ISOLATED | Bulk | TO-218 Isolated | Through Hole | - | -55°C ~ 150°C (TJ) |

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