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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 24A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 15A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris Corporation20A, 350V, N-CHANNEL IGBTBulk--*-
Harris Corporation20A, 350V, N-CHANNEL IGBTBulk--*-
Fairchild SemiconductorIGBT 380V 20A TO-220ABBulkTO-220ABThrough Hole--40°C ~ 175°C (TJ)
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