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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 14A TO-220ABBulkTO-220ABThrough Hole--40°C ~ 150°C (TJ)
onsemiIGBT 600V 14A TO-220-3TubeTO-220-3Through Hole--
Watech Electronics1200V 40A IGBT without FRD TO-2Bulk----
Watech ElectronicsIGBT FIELD STOP 650V 200A TO-247BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT 1200V 80A TO-247-3BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
Watech ElectronicsIGBT FIELD STOP 1200V 82A TO-247BulkTO-247-3Through Hole--40°C ~ 175°C (TJ)
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