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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT NPT 1200V 21A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
 HGTP6N40E1D $0.60 | Harris Corporation | IGBT 400V 7.5A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
HGTP6N40EID $0.60 | Harris Corporation | 7.5A, 400V, N-CHANNEL IGBT | Bulk | - | - | * | - |
| onsemi | IGBT 600V 34A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT 600V 34A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
HGTP7N60A4_NL $0.51 | Fairchild Semiconductor | IGBT 600V 34A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 34A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
 HGTP7N60B3D $0.92 | Harris Corporation | IGBT 600V 14A TO-220AB | Bulk | TO-220AB | Through Hole | - | -55°C ~ 150°C (TJ) |
