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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTP10N40F1D $0.82 | Harris Corporation | IGBT 400V 12A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP10N50E1 $1.79 | Harris Corporation | IGBT 500V 10A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP10N50E1D $2.67 | Harris Corporation | IGBT 500V 17.5A TO-220 | Bulk | TO-220 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP12N6001 $1.91 | Harris Corporation | HGTP12N6001 | Bulk | - | - | * | - |
![]() HGTP12N60A4 $0.61 | Fairchild Semiconductor | IGBT 600V 54A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTP12N60A4D $1.55 | Fairchild Semiconductor | IGBT 600V 54A TO-220-3 | Bulk | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 24A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -40°C ~ 150°C (TJ) | |
![]() HGTP12N60C3D $1.25 | onsemi | IGBT 600V 24A TO-220-3 | Tube,Tube | TO-220-3 | Through Hole | - | -40°C ~ 150°C (TJ) |

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