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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 400V 12A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 10A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 17.5A TO-220BulkTO-220Through Hole--55°C ~ 150°C (TJ)
Harris CorporationHGTP12N6001Bulk--*-
Fairchild SemiconductorIGBT 600V 54A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 54A TO-220-3BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 24A TO-220-3TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
onsemiIGBT 600V 24A TO-220-3Tube,TubeTO-220-3Through Hole--40°C ~ 150°C (TJ)
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