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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 600V 60A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 63A SUPER-247BulkSUPER-247 (TO-274AA)Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 63A TO-247BulkTO-247Through Hole--40°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 50A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 1000V 55A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 75A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 70A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 75A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
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