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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 600V 60A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTG30N60C3 $2.06 | Harris Corporation | IGBT 600V 63A SUPER-247 | Bulk | SUPER-247 (TO-274AA) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG30N60C3D $5.92 | Fairchild Semiconductor | IGBT 600V 63A TO-247 | Bulk | TO-247 | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGTG32N60E2 $6.76 | Harris Corporation | IGBT 600V 50A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG34N100E2 $6.94 | Harris Corporation | IGBT 1000V 55A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG40N60A4 $5.19 | onsemi | IGBT 600V 75A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTG40N60C3 $5.16 | Harris Corporation | IGBT 600V 75A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |

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