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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 21A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
Harris Corporation24A, 600V, RUGGED, UFS SERIES NBulk--*-
Harris CorporationIGBT 1200V 35A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 54A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 54A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 1000V 34A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 26A TO-247BulkTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 70A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
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