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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTG12N60D1D $5.82 | Harris Corporation | IGBT 600V 21A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG12N60DID $2.90 | Harris Corporation | 24A, 600V, RUGGED, UFS SERIES N | Bulk | - | - | * | - |
![]() HGTG15N120C3 $3.67 | Harris Corporation | IGBT 1200V 35A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT 1200V 54A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT 1200V 54A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() HGTG20N100D2 $7.89 | Harris Corporation | IGBT 1000V 34A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTG20N50C1D $6.51 | Harris Corporation | IGBT 500V 26A TO-247 | Bulk | TO-247 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 70A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 150°C (TJ) |

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