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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 500V 12A TO-252AABulkTO-252AASurface Mount--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 35A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT NPT 1200V 43A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 43A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 54A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 54A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 27A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 24A TO-247TubeTO-247Through Hole--40°C ~ 150°C (TJ)
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