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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGT1S3N60C3DS $0.78 | Harris Corporation | IGBT 600V 6A TO-263AB | Bulk | TO-263AB | Surface Mount | - | - |
| onsemi | IGBT 600V 34A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() HGT1S7N60B3 $0.83 | Harris Corporation | IGBT 600V 14A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGT1S7N60B3D $1.00 | Harris Corporation | IGBT 600V 14A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGT1S7N60C3D $0.83 | Fairchild Semiconductor | IGBT 600V 14A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGT1S7N60C3DS $1.05 | Harris Corporation | IGBT 600V 14A TO-263AB | Bulk | TO-263AB | Surface Mount | - | - |
![]() HGT1S7N60C3DS9A $1.93 | Harris Corporation | IGBT 600V 14A TO-263AB | Bulk | TO-263AB | Surface Mount | - | - |
![]() HGT4E30N60B3S $4.08 | Harris Corporation | IGBT 60A, 600V, N CHANNEL, TO 26 | Bulk | - | - | * | - |

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