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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT 600V 70A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
 HGT1S20N60B3S $2.57 | Harris Corporation | IGBT 600V 40A TO-263AB | Bulk | TO-263AB | Surface Mount | - | - |
 HGT1S20N60C3R $1.65 | Harris Corporation | IGBT 600V 40A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 150°C (TJ) |
| onsemi | IGBT 600V 45A TO-263 | Tape & Reel (TR) | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
 HGT1S2N120CN $1.73 | Fairchild Semiconductor | IGBT NPT 1200V 13A TO-262 | Tube | TO-262 | Through Hole | - | -55°C ~ 150°C (TJ) |
 HGT1S3N60A4DS9A $1.53 | Fairchild Semiconductor | IGBT 600V 17A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) |
 HGT1S3N60B3S $0.48 | Harris Corporation | IGBT 600V 7A TO-263AB | Bulk | TO-263AB | Surface Mount | - | -55°C ~ 150°C (TJ) |
HGT1S3N60C3D $0.77 | Harris Corporation | IGBT 600V 6A I2PAK | Bulk | I2PAK (TO-262) | Through Hole | - | -40°C ~ 150°C (TJ) |
