ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 HGT1S12N60B3DS $1.19 | Harris Corporation | IGBT 600V 27A TO-263AB | Bulk | TO-263AB | Surface Mount | - | -55°C ~ 150°C (TJ) |
 HGT1S12N60C3 $1.31 | Harris Corporation | IGBT 600V 24A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 150°C (TJ) |
HGT1S12N60C3D $1.13 | Harris Corporation | IGBT 600V 24A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 150°C (TJ) |
 HGT1S12N60C3DS $1.79 | Fairchild Semiconductor | IGBT 600V 24A TO-263AB | Bulk | TO-263AB | Surface Mount | - | -40°C ~ 150°C (TJ) |
 HGT1S12N60C3R $1.11 | Harris Corporation | IGBT 600V 24A I2PAK | Bulk | I2PAK (TO-262) | Through Hole | - | -55°C ~ 150°C (TJ) |
HGT1S12N60C3S9AR4501 $1.34 | Harris Corporation | 27A, 600V, UFS N-CHANNEL IGBT | Bulk | - | - | * | - |
| onsemi | IGBT 390V 18A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -40°C ~ 175°C (TJ) | |
HGT1S14N36G3VLT $1.41 | Fairchild Semiconductor | IGBT 390V 18A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -40°C ~ 175°C (TJ) |
