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Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Screen Default Ranking Price By Date
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
 GT30J65MRB,S1E $3.25 | Toshiba Semiconductor and Storage | IGBT 650V 60A TO-3P | Tube | TO-3P(N) | Through Hole | - | 175°C (TJ) |
 GT30N135SRA,S1E $4.87 | Toshiba Semiconductor and Storage | IGBT 1350V 60A TO-247 | Tube | TO-247 | Through Hole | - | 175°C (TJ) |
GT40QR21(STA1,E,D $4.51 | Toshiba Semiconductor and Storage | IGBT 1200V 40A TO-3P | Tube | TO-3P(N) | Through Hole | - | 175°C (TJ) |
GT40RR21(STA1,E $4.54 | Toshiba Semiconductor and Storage | IGBT 1200V 40A TO-3P | Tube | TO-3P(N) | Through Hole | - | 175°C (TJ) |
GT40WR21,Q $9.61 | Toshiba Semiconductor and Storage | IGBT 1350V 40A TO-3P | Tray | TO-3P(N) | Through Hole | - | 175°C (TJ) |
| Toshiba Semiconductor and Storage | IGBT 600V 50A 240W TO3P LH | Tube | TO-3P(LH) | Through Hole | - | 150°C (TJ) | |
GT50J341,Q $3.81 | Toshiba Semiconductor and Storage | IGBT 600V 50A TO-3P | Tray | TO-3P(N) | Through Hole | - | 175°C (TJ) |
GT50JR21(STA1,E,S) $5.56 | Toshiba Semiconductor and Storage | IGBT 600V 50A TO-3P | Tube | TO-3P(N) | Through Hole | - | 175°C (TJ) |
