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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| SemiQ | IGBT NPT/TRENCH 1200V 30A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT TRENCH FS 1350V 40A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT NPT/TRENCH 1200V 50A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT TRENCH FS 1350V 60A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT TRENCH FS 1200V 80A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT NPT/TRENCH 1200V 80A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT NPT/TRENCH 1000V 60A TO-264 | Tube | TO-264 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| SemiQ | IGBT TRENCH FS 600V 120A TO-3PN | Tube | TO-3PN | Through Hole | - | -55°C ~ 150°C (TJ) |

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