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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
SemiQIGBT NPT/TRENCH 1200V 30A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1350V 40A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1200V 50A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1350V 60A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 1200V 80A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1200V 80A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
SemiQIGBT NPT/TRENCH 1000V 60A TO-264TubeTO-264Through Hole--55°C ~ 150°C (TJ)
SemiQIGBT TRENCH FS 600V 120A TO-3PNTubeTO-3PNThrough Hole--55°C ~ 150°C (TJ)
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