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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 950V 150A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
IXYSIGBT NPT 600V 38A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 600V 38A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 600V 65A ISOPLUS I4-PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
IXYSIGBT NPT 1200V 50A ISOPLUS I4PACTubeISOPLUS i4-PAC™Through Hole--55°C ~ 150°C (TJ)
GeneSiC SemiconductorIGBT PT 1200V TO-247ABTubeTO-247ABThrough Hole--40°C ~ 150°C (TJ)
STMicroelectronicsIGBTBulk-Surface MountECOPACK®-55°C ~ 175°C (TJ)
Microchip TechnologyIGBT 700V 3.5A TO252Tape & Reel (TR)TO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
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