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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT TRENCH 300V TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 330V TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 14A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 14A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 300V TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT, 8A, 400V, N-CHANNELBulk-Surface Mount--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH 400V 8-SOICBulk8-SOICSurface Mount--40°C ~ 150°C (TJ)
onsemiIGBT FS 1200V 200A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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