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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT 400V 41A TO-220-3TubeTO-220-3Through HoleEcoSPARK®-55°C ~ 175°C (TJ)
onsemiIGBT 600V 45A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 45A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 400V 26.9A TO-220-3TubeTO-220-3Through HoleEcoSPARK®-40°C ~ 175°C (TJ)
onsemiIGBT 600V 75A TO-220-3TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT FIELD STOP 600V 10A TO-220BulkTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 600V 10A TO-220TubeTO-220-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 600V 20A TO-220F-3TubeTO-220F-3Through Hole--55°C ~ 150°C (TJ)
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