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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGM622S $2.13 | Sanken Electric USA Inc. | IGBT 600V 25A TO-3PF | Tube | TO-3PF | Through Hole | - | 150°C (TJ) |
![]() FGM623S $2.24 | Sanken Electric USA Inc. | IGBT 600V 30A TO-3PF | Bulk | TO-3PF | Through Hole | - | 150°C (TJ) |
| Sanken Electric USA Inc. | IGBT TRENCH 600V 30A TO-3PF | Bulk | TO-3PF | Through Hole | - | 150°C (TJ) | |
![]() FGP10N60UNDF $0.84 | Fairchild Semiconductor | FGP10N60UNDF - IGBT, 600V, 10A, | Bulk | - | - | * | - |
| onsemi | IGBT NPT 600V 30A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT FIELD STOP 600V 40A TO-220 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGP20N6S2 $0.44 | Fairchild Semiconductor | IGBT 600V 28A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGP20N6S2D $1.18 | onsemi | IGBT 600V 28A TO-220-3 | Tube | TO-220-3 | Through Hole | - | -55°C ~ 150°C (TJ) |

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