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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
| onsemi | IGBT TRENCH FS 1200V 80A TO-264 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGL35N120FTDTU $5.15 | Fairchild Semiconductor | IGBT TRENCH FS 1200V 70A HPM F2 | Bulk | HPM F2 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGL40N120ANDTU $17.81 | onsemi | IGBT NPT 1200V 64A TO-264-3 | Tube,Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
| onsemi | IGBT NPT 1200V 64A TO-264-3 | Bulk | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT/TRENCH 1000V 60A TO-264 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT/TRENCH 1000V 60A TO-264 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) | |
![]() FGL60N100DTU $3.00 | onsemi | IGBT TRENCH 1000V 60A TO-264-3 | Tube | TO-264-3 | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() FGM603 $2.13 | Sanken Electric USA Inc. | IGBT 600V 30A TO-3PF | Bulk | TO-3PF | Through Hole | - | - |

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