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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 1200V 80A TO-264TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT TRENCH FS 1200V 70A HPM F2BulkHPM F2Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 64A TO-264-3Tube,TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 64A TO-264-3BulkTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT/TRENCH 1000V 60A TO-264TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT/TRENCH 1000V 60A TO-264TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH 1000V 60A TO-264-3TubeTO-264-3Through Hole--55°C ~ 150°C (TJ)
FGM603
FGM603
$2.13
Sanken Electric USA Inc.IGBT 600V 30A TO-3PFBulkTO-3PFThrough Hole--
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