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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT FS 1200V 200A TO-247-4LTubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 150A TO-247-4LTubeTO-247-4LThrough Hole--55°C ~ 175°C (TJ)
onsemiIGBT 1200V 120A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 105A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 600V 150A POWERTO-247-3TubePowerTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 150A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FS 1200V 150A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 950V 150A TO-247Tube,TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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