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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGY4L160T120SWD $12.82 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L75T120SWD $7.09 | onsemi | IGBT FS 1200V 150A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY60T120SQDN $10.21 | onsemi | IGBT 1200V 120A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY60T120SWD $6.46 | onsemi | IGBT FS 1200V 105A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT FS 600V 150A POWERTO-247-3 | Tube | PowerTO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGY75T120SQDN $11.45 | onsemi | IGBT FS 1200V 150A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY75T120SWD $6.83 | onsemi | IGBT FS 1200V 150A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY75T95LQDT $6.11 | onsemi | IGBT TRENCH FS 950V 150A TO-247 | Tube,Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |

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