Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select products	Mfr	Description	Package	Supplier Device Package	Mounting Type	Series	Operating Temperature
GPI040A060MN-FD	SemiQ	IGBT TRENCH FS 600V 80A TO-3PN	Tube	TO-3PN	Through Hole	-	-55°C ~ 150°C (TJ)
GT10G131(TE12L,Q)	Toshiba Semiconductor and Storage	IGBT 400V 1W 8-SOIC	Tape & Reel (TR)	8-SOP (5.5x6.0)	Surface Mount	-	150°C (TJ)
GT10J312(Q)	Toshiba Semiconductor and Storage	IGBT 600V 10A 60W TO220SM	Tube	-	Through Hole	-	150°C (TJ)
GT15J341,S4X $2.49	Toshiba Semiconductor and Storage	IGBT 600V 15A TO-220SIS	Tube	TO-220SIS	Through Hole	-	150°C (TJ)
GT20J341,S4X(S $2.74	Toshiba Semiconductor and Storage	IGBT 600V 20A TO-220SIS	Tube	TO-220SIS	Through Hole	-	150°C (TJ)
GT20N135SRA,S1E $4.40	Toshiba Semiconductor and Storage	IGBT 1350V 40A TO-247	Tube	TO-247	Through Hole	-	175°C (TJ)
GT30J121(Q) $3.60	Toshiba Semiconductor and Storage	IGBT 600V 30A 170W TO3PN	Tube	TO-3P(N)	Through Hole	-	-
GT30J341,Q $1.75	Toshiba Semiconductor and Storage	IGBT 600V 59A TO-3P	Tray	TO-3P(N)	Through Hole	-	175°C (TJ)