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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Toshiba Semiconductor and StorageIGBT 600V 50A TO-3PTubeTO-3P(N)Through Hole-175°C (TJ)
Toshiba Semiconductor and StorageIGBT 1000V 50A TO-3PTrayTO-3P(N)Through Hole-150°C (TJ)
Toshiba Semiconductor and StorageIGBT 1000V 60A TO-3PTubeTO-3P(LH)Through Hole-150°C (TJ)
Toshiba Semiconductor and StorageIGBT 400V 600MW 8TSSOPTape & Reel (TR)8-TSSOPSurface Mount-150°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 80A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBT TRENCH FS 1200V 80A TO247TubeTO-247 Long LeadsThrough Hole--55°C ~ 175°C (TJ)
STMicroelectronicsIGBTBulkTO-247 Long LeadsThrough HoleECOPACK®-55°C ~ 175°C (TJ)
Watech Electronics650V 100A INPC IGBT with Easy2BBulk----
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