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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() GT50JR22(STA1,E,S) $5.56 | Toshiba Semiconductor and Storage | IGBT 600V 50A TO-3P | Tube | TO-3P(N) | Through Hole | - | 175°C (TJ) |
![]() GT50N322A $4.71 | Toshiba Semiconductor and Storage | IGBT 1000V 50A TO-3P | Tray | TO-3P(N) | Through Hole | - | 150°C (TJ) |
| Toshiba Semiconductor and Storage | IGBT 1000V 60A TO-3P | Tube | TO-3P(LH) | Through Hole | - | 150°C (TJ) | |
| Toshiba Semiconductor and Storage | IGBT 400V 600MW 8TSSOP | Tape & Reel (TR) | 8-TSSOP | Surface Mount | - | 150°C (TJ) | |
![]() GWA40MS120DF4AG $6.89 | STMicroelectronics | IGBT TRENCH FS 1200V 80A TO247 | Tube | TO-247 Long Leads | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() GWA40MS120F4AG $2.76 | STMicroelectronics | IGBT TRENCH FS 1200V 80A TO247 | Tube | TO-247 Long Leads | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() GWA75H65DRFB2AG $2.69 | STMicroelectronics | IGBT | Bulk | TO-247 Long Leads | Through Hole | ECOPACK® | -55°C ~ 175°C (TJ) |
![]() H3L100R07W2G4 $10.20 | Watech Electronics | 650V 100A INPC IGBT with Easy2B | Bulk | - | - | - | - |

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