SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Search productSearch post
— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() H3L150R07W2G4 $93.50 | Watech Electronics | 650V 150A INPC IGBT with Easy2B | Bulk | - | - | - | - |
![]() HG24N60D1D $4.43 | Harris Corporation | HG24N60D1D | Bulk | - | - | * | - |
| onsemi | IGBT NPT 1200V 35A TO-263 | Tube | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
| onsemi | IGBT NPT 1200V 35A TO-263 | Tape & Reel (TR),Cut Tape (CT) | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) | |
![]() HGT1S12N60A4DS $3.15 | Fairchild Semiconductor | IGBT 600V 54A TO-263AB | Bulk | TO-263AB | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() HGT1S12N60A4S9A $1.22 | onsemi | IGBT 600V 54A TO-263 | Tape & Reel (TR) | TO-263 (D2PAK) | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() HGT1S12N60B3 $1.16 | Harris Corporation | IGBT 600V 27A TO-262 | Bulk | TO-262 (I2PAK) | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGT1S12N60B3D $1.16 | Harris Corporation | IGBT 600V 27A I2PAK | Bulk | I2PAK (TO-262) | Through Hole | - | -55°C ~ 150°C (TJ) |

The activity of extra discounts on wholesale prices is in full swing…
Please fill in your contact information and we will send you the latest wholesale price list.





