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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Fairchild SemiconductorIGBT 445V 25A TO-263ABBulkTO-263ABSurface Mount--55°C ~ 175°C (TJ)
Fairchild SemiconductorIGBTBulk--*-
Harris CorporationIGBT 1200V 35A TO-262BulkTO-262 (I2PAK)Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 1200V 35A TO-263ABBulkTO-263ABSurface Mount--55°C ~ 150°C (TJ)
Harris Corporation40A, 350V, UFS N-CHANNEL IGBTBulk--*-
onsemiIGBT 375V 20A TO-263TubeTO-263 (D2PAK)Surface Mount--40°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 395V 37.7A TO-262TubeTO-262 (I2PAK)Through Hole--40°C ~ 175°C (TJ)
Fairchild SemiconductorIGBT 415V 37.7A TO-263ABBulkTO-263ABSurface Mount--40°C ~ 175°C (TJ)
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