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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 60A, 600V, N CHANNEL, TO 26Bulk--*-
Harris CorporationIGBT 600V 50A TO-218-5BulkTO-218-5Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 12A TO-220-5BulkTO-220-5Through Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 400V 12A TO-252BulkTO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 12A IPAKBulkIPAKThrough Hole--55°C ~ 150°C (TJ)
onsemiIGBT NPT 1200V 5.3A TO-252AATape & Reel (TR),Cut Tape (CT)TO-252AASurface Mount--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 17A TO-252BulkTO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 7A IPAKBulkIPAKThrough Hole--55°C ~ 150°C (TJ)
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