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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Harris CorporationIGBT 600V 7A TO-252BulkTO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 7A TO-252BulkTO-252 (DPAK)Surface Mount--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 6A IPAKBulkIPAKThrough Hole--40°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 6A TO-252BulkTO-252 (DPAK)Surface Mount--40°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 14A IPAKBulkIPAKThrough Hole--55°C ~ 150°C (TJ)
Harris CorporationIGBT 600V 14A TO-252AABulkTO-252AASurface Mount--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 14A TO-252BulkTO-252 (DPAK)Surface Mount--40°C ~ 150°C (TJ)
Harris CorporationIGBT 500V 12A IPAKBulkIPAKThrough Hole--40°C ~ 150°C (TJ)
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