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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() HGTD3N60B3S $0.44 | Harris Corporation | IGBT 600V 7A TO-252 | Bulk | TO-252 (DPAK) | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() HGTD3N60B3S9A $0.44 | Harris Corporation | IGBT 600V 7A TO-252 | Bulk | TO-252 (DPAK) | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() HGTD3N60C3 $0.43 | Harris Corporation | IGBT 600V 6A IPAK | Bulk | IPAK | Through Hole | - | -40°C ~ 150°C (TJ) |
![]() HGTD3N60C3S9A $0.37 | Fairchild Semiconductor | IGBT 600V 6A TO-252 | Bulk | TO-252 (DPAK) | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() HGTD7N60B3 $0.62 | Harris Corporation | IGBT 600V 14A IPAK | Bulk | IPAK | Through Hole | - | -55°C ~ 150°C (TJ) |
![]() HGTD7N60B3S $0.64 | Harris Corporation | IGBT 600V 14A TO-252AA | Bulk | TO-252AA | Surface Mount | - | -55°C ~ 150°C (TJ) |
![]() HGTD7N60C3S9A $1.04 | Fairchild Semiconductor | IGBT 600V 14A TO-252 | Bulk | TO-252 (DPAK) | Surface Mount | - | -40°C ~ 150°C (TJ) |
![]() HGTD8P50G1 $1.21 | Harris Corporation | IGBT 500V 12A IPAK | Bulk | IPAK | Through Hole | - | -40°C ~ 150°C (TJ) |

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