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— IC芯片 | 连接器 | 传感器 | 被动器件 —
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— IC芯片 | 连接器 | 传感器 | 被动器件 —

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
| Select products | Mfr | Description | Package | Supplier Device Package | Mounting Type | Series | Operating Temperature |
|---|---|---|---|---|---|---|---|
![]() FGY100T120SWD $4.75 | onsemi | IGBT FS 1200V 200A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY100T65SCDT $8.06 | onsemi | IGBT TRENCH FS 650V 200A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY120T65SPD-F085 $13.82 | onsemi | IGBT TRENCH FS 650V 240A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY140T120SWD $11.86 | onsemi | IGBT FS 1200V 280A TO-247-3 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) |
| onsemi | IGBT TRENCH FS 650V 240A TO-247 | Tube | TO-247-3 | Through Hole | - | -55°C ~ 175°C (TJ) | |
![]() FGY40T120SMD $11.40 | onsemi | IGBT TRENCH FS 1200V 80A TO-247 | Tube | TO-247 | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L100T120SWD $8.02 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |
![]() FGY4L140T120SWD $9.85 | onsemi | IGBT FS 1200V 200A TO-247-4L | Tube | TO-247-4L | Through Hole | - | -55°C ~ 175°C (TJ) |

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