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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT NPT 1200V 64A TO-247-3TubeTO-247-3Through Hole--
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTOBulk--*-
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 80A TO247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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