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Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
onsemiIGBT TRENCH FS 1200V 50A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 60A TO-247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 60A TO-247-3Tube,TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 45A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT 600V 45A TO-247-3TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1300V 60A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT 1500V 60A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 650V 60A TO-247-3TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
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