Product categories

Filter by price :
Single IGBTs

Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Screen Default Ranking Price By Date
Select productsMfrDescriptionPackageSupplier Device PackageMounting TypeSeriesOperating Temperature
Sanken Electric USA Inc.IGBT TRENCH FS 650V 65A TO-3PFBulkTO-3PFThrough Hole-175°C (TJ)
onsemiIGBT TRENCH FS 1200V 80A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT TRENCH FS 1200V 30A TO-247TubeTO-247-3Through Hole--55°C ~ 175°C (TJ)
onsemiIGBT FIELD STOP 600V 40A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 600V 40A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT FIELD STOP 600V 40A TO247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Fairchild SemiconductorIGBT 600V 28A TO-247TubeTO-247Through Hole--55°C ~ 150°C (TJ)
onsemiIGBT TRENCH FS 1200V 50A TO-247TubeTO-247-3Through Hole--55°C ~ 150°C (TJ)
Add ComparisonUp to 4 can be added